N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH MOSFET, IRF740 datasheet, IRF740 circuit, IRF740 data sheet: STMICROELECTRONICS, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. TRANSISTOR, IRF740, N CHANNEL POWER MOSFET, 400V, 10A, TO-220 For more about Transistors, click here. My first look at a MOSFET, so just a basic circuit to test it out as a switch for a motor. See me on Facebook: https://goo.gl/H4u3UB. IRF740 MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for IRF740 MOSFET.
- Irf740 Mosfet Circuit Design
- Irf740 Pdf
- Mosfet Irf740 As Switch
- Irf740 Mosfet Datasheet
- Irf7469trpbf Datasheet
- Irf740 Mosfet
This is one of the MOSFET types. This is a kind of the transistor IRF740.
Part Number : IRF740
Function : Power MOSFET ( Vds=400V )
Package : TO-220AB Type
Manufacturers : Vishay Semiconductors
Image
Description :
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
IRF740 pinout
Features
1. Dynamic dV/dt Rating
2. Repetitive Avalanche Rated
3. Fast Switching
4. Ease of Paralleling
5. Simple Drive Requirements
6. Compliant to RoHS Directive 2002/95/EC
IRF740 Datasheet
Other data sheets within the file : IRF740AS, IRF740PbF, SiHF740, SiHF740-E3
Related articles across the web
Type Designator: IRF740
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 400 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 63 nC
Drain-Source Capacitance (Cd): 1450 pF
Maximum Drain-Source On-State Resistance (Rds): 0.55 Ohm
Package: TO220
IRF740 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF740 Datasheet (PDF)
0.1. irf740s.pdf Size:93K _st
IRF740S N - CHANNEL 400V - 0.48 - 10A- D2PAKPowerMESH MOSFETTYPE VDSS RDS(on) IDIRF740S 400 V
0.2. irf740 irf741 irf742 irf743-fi.pdf Size:482K _st
0.3. irf740.pdf Size:93K _st
IRF740 N - CHANNEL 400V - 0.48 - 10 A - TO-220PowerMESH MOSFETTYPE VDSS RDS(on) IDIRF740 400 V
0.4. irf740.pdf Size:154K _fairchild_semi
0.5. irf740b irfs740b.pdf Size:924K _fairchild_semi
November 2001IRF740B/IRFS740B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to
0.6. irf740as.pdf Size:135K _international_rectifier
PD- 92005SMPS MOSFETIRF740AS/LHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 400V 0.55 10A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 PakAvalanch
0.7. irf740lcpbf.pdf Size:1404K _international_rectifier
PD - 94880IRF740LCPbF Lead-Free12/10/03Document Number: 91052 www.vishay.com1IRF740LCPbFDocument Number: 91052 www.vishay.com2IRF740LCPbFDocument Number: 91052 www.vishay.com3IRF740LCPbFDocument Number: 91052 www.vishay.com4IRF740LCPbFDocument Number: 91052 www.vishay.com5IRF740LCPbFDocument Number: 91052 www.vishay.com6IRF740LCPbFDocument Nu
0.8. irf7402pbf.pdf Size:183K _international_rectifier
PD - 95202IRF7402PbFHEXFET Power MOSFET Generation V TechnologyA Ultra Low On-ResistanceA1 8S D N-Channel MOSFETVDSS = 20V2 7S D Very Small SOIC Package Low Profile (
0.9. irf7404qpbf.pdf Size:242K _international_rectifier
PD - 96127AIRF7404QPbFHEXFET Power MOSFETl Advanced Process TechnologyA1 8l Ultra Low On-ResistanceS DVDSS = -20Vl P Channel MOSFET2 7S Dl Surface Mount3 6S Dl Available in Tape & Reel4 5l 150C Operating TemperatureG DRDS(on) = 0.040l Lead-FreeTop ViewDescriptionThese HEXFET Power MOSFET's in packageutilize the lastest processing techniqu
0.10. irf740s.pdf Size:171K _international_rectifier
0.11. irf7406.pdf Size:114K _international_rectifier
PD - 9.1247CIRF7406PRELIMINARYHEXFET Power MOSFET Generation V TechnologyA1 8 Ultra Low On-Resistance S DVDSS = -30V2 7 P-Channel MosfetS D Surface Mount3 6S D Available in Tape & Reel4 5G DRDS(on) = 0.045 Dynamic dv/dt Rating Fast SwitchingTop V iewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing te
0.12. irf7401.pdf Size:118K _international_rectifier
PD - 9.1244CIRF7401HEXFET Power MOSFET Generation V TechnologyAA1 8 Ultra Low On-Resistance S DVDSS = 20V2 7 N-Channel MosfetS D Surface Mount3 6S D Available in Tape & Reel4 5G DRDS(on) = 0.022 Dynamic dv/dt Rating Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to
0.13. irf740as-l.pdf Size:304K _international_rectifier
PD- 95532SMPS MOSFETIRF740AS/LPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 400V 0.55 10Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and D 2
0.14. irf7403.pdf Size:116K _international_rectifier
PD - 9.1245BPRELIMINARY IRF7403HEXFET Power MOSFET Generation V TechnologyA Ultra Low On-Resistance A1 8S D N-Channel MosfetVDSS = 30V2 7S D Surface Mount3 6 Available in Tape & ReelS D Dynamic dv/dt Rating4 5G DRDS(on) = 0.022 Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingte
Irf740 Mosfet Circuit Design
0.15. irf7406pbf-1.pdf Size:231K _international_rectifier
IRF7406TRPbF-1HEXFET Power MOSFETVDS -30 VA1 8S DRDS(on) max 0.045 2 7(@V = -10V) S DGSQg (max) 59 nC 3 6S DID 45G D-5.8 A(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environment
0.16. irf740.pdf Size:926K _international_rectifier
PD - 94872IRF740PbF Lead-Free12/5/03Document Number: 91053 www.vishay.com1IRF740PbFDocument Number: 91053 www.vishay.com2IRF740PbFDocument Number: 91053 www.vishay.com3IRF740PbFDocument Number: 91053 www.vishay.com4IRF740PbFDocument Number: 91053 www.vishay.com5IRF740PbFDocument Number: 91053 www.vishay.com6IRF740PbFTO-220AB Package Outline
0.17. irf7404.pdf Size:163K _international_rectifier
PD - 9.1246CIRF7404HEXFET Power MOSFET Generation V TechnologyA1 8S D Ultra Low On-ResistanceVDSS = -20V2 7 P-Channel MosfetS D Surface Mount3 6S D Available in Tape & Reel4 5G DRDS(on) = 0.040 Dynamic dv/dt Rating Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to a
0.18. irf7404pbf-1.pdf Size:234K _international_rectifier
IRF7404TRPbF-1HEXFET Power MOSFETVDS -20 VA1 8S DRDS(on) max 0.04 2 7(@V = -4.5V) S DGSQg 50 nC 3 6S DID 4 5-6.7 A G D(@T = 25C)ATop View SO-8Features BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally Frie
0.19. irf7404pbf.pdf Size:231K _international_rectifier
PD - 95203IRF7404PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance A1 8S Dl P-Channel MosfetVDSS = -20V2 7S Dl Surface Mount3 6Sl Available in Tape & Reel D4 5l Dynamic dv/dt RatingG DRDS(on) = 0.040l Fast SwitchingTop Viewl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proces
0.20. irf740spbf.pdf Size:951K _international_rectifier
PD - 95204IRF740SPbF Lead-Free4/29/04Document Number: 91055 www.vishay.com1IRF740SPbFDocument Number: 91055 www.vishay.com2IRF740SPbFDocument Number: 91055 www.vishay.com3IRF740SPbFDocument Number: 91055 www.vishay.com4IRF740SPbFDocument Number: 91055 www.vishay.com5IRF740SPbFDocument Number: 91055 www.vishay.com6IRF740SPbFD2Pak Package Outli
0.21. irf7401pbf.pdf Size:197K _international_rectifier
PD - 95724IRF7401PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceAA1 8l N-Channel MosfetS DVDSS = 20Vl Surface Mount 2 7S Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating4 5G DRDS(on) = 0.022l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proc
0.22. irf7403pbf.pdf Size:231K _international_rectifier
PD - 95301IRF7403PbFHEXFET Power MOSFETl Generation V TechnologyAl Ultra Low On-Resistance A1 8S Dl N-Channel MosfetVDSS = 30V2 7S Dl Surface Mount3 6l Available in Tape & ReelS Dl Dynamic dv/dt Rating45G DRDS(on) = 0.022l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced proc
0.23. irf7406gpbf.pdf Size:262K _international_rectifier
PD -96259IRF7406GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceAl P-Channel Mosfet1 8S Dl Surface MountVDSS = -30V2 7S Dl Available in Tape & Reell Dynamic dv/dt Rating 3 6S Dl Fast Switching4 5G Dl Lead-FreeRDS(on) = 0.045l Halogen-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize
0.24. irf7402.pdf Size:136K _international_rectifier
PD - 93851AIRF7402HEXFET Power MOSFET Generation V TechnologyAA Ultra Low On-Resistance 1 8S D N-Channel MOSFETVDSS = 20V2 7S D Very Small SOIC Package3 6S D Low Profile (
0.25. irf740alpbf irf740aspbf.pdf Size:316K _international_rectifier
PD- 95532SMPS MOSFETIRF740AS/LPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 400V 0.55 10Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and2
0.26. irf740lc.pdf Size:174K _international_rectifier
0.27. irf740a.pdf Size:196K _international_rectifier
PD- 94828SMPS MOSFETIRF740APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 400V 0.55 10Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanch
0.28. irf7406pbf.pdf Size:235K _international_rectifier
PD - 95302IRF7406PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceA1 8l P-Channel Mosfet S DVDSS = -30V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating4 5G DRDS(on) = 0.045l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proces
0.29. irf7401pbf-1.pdf Size:236K _international_rectifier
IRF7401PbF-1HEXFET Power MOSFETVDS 20 VAA1 8S DRDS(on) max 0.022 2 7(@V = 4.5V) S DGSQg 48 nC3 6S DID 4 58.7 A G D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally Fri
0.30. irfp340 irfp341 irfp342 irfp343 irf740 irf741 irf742 irf743.pdf Size:191K _samsung
0.31. irfp340-343 irf740-743.pdf Size:191K _samsung
0.32. irf740a.pdf Size:937K _samsung
Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va
Irf740 Pdf
0.33. irf740apbf sihf740a.pdf Size:206K _vishay
IRF740A, SiHF740AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 400RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 36COMPLIANTRuggednessQgs (nC) 9.9 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 16and CurrentConfigur
0.34. irf740 sihf740.pdf Size:196K _vishay
IRF740, SiHF740Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55RoHS* Fast SwitchingQg (Max.) (nC) 63 COMPLIANT Ease of ParallelingQgs (nC) 9.0Qgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES
0.35. irf740lc irf740lcpbf sihf740lc.pdf Size:197K _vishay
IRF740LC, SiHF740LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.55 Enhanced 30 V VGS RatingRoHS*COMPLIANTQg (Max.) (nC) 39 Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche Rated Comp
0.36. irf740spbf sihf740s.pdf Size:195K _vishay
IRF740S, SiHF740SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 400 Surface MountRDS(on) ()VGS = 10 V 0.55 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt RatingQgs (nC) 9.0 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 32 Ease of ParallelingConfiguration Sin
0.37. irf740pbf sihf740.pdf Size:196K _vishay
IRF740, SiHF740Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55RoHS* Fast SwitchingQg (Max.) (nC) 63 COMPLIANT Ease of ParallelingQgs (nC) 9.0Qgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES
0.38. irf740a sihf740a.pdf Size:205K _vishay
Mosfet Irf740 As Switch
IRF740A, SiHF740AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 400RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 36COMPLIANTRuggednessQgs (nC) 9.9 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 16and CurrentConfigur
0.39. irf740lc sihf740lc.pdf Size:197K _vishay
IRF740LC, SiHF740LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.55 Enhanced 30 V VGS RatingRoHS*COMPLIANTQg (Max.) (nC) 39 Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche Rated Comp
0.40. hirf740.pdf Size:48K _hsmc
Spec. No. : MOS200512HI-SINCERITYIssued Date : 2005.09.01Revised Date : 2005.09.22MICROELECTRONICS CORP.Page No. : 1/4HIRF740 Series Pin AssignmentHIRF740 / HIRF740FTabN-Channel Power MOSFET (400V, 10A)3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThis N-Channel MOSFETs provide the designer with the best combinationo
0.41. irf740.pdf Size:235K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRF740FEATURESDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitch mode power supplyUninterruptable power supplyHigh speed power switchingABSOLUTE MAXIMUM
0.42. irf740fi.pdf Size:231K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRF740FIDESCRIPTIONDrain Current I = 5.5A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltag
0.43. irf740a.pdf Size:213K _inchange_semiconductor
isc N-Channel Mosfet Transistor IRF740AFEATURESDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitch mode power supplyUninterruptable power supplyHigh speed power switchingABSOLUTE MAXIMUM
Datasheet: IRF732, IRF7321D2, IRF7322D1, IRF7324D1, IRF733, IRF734, IRF7353D1, IRF737LC, IRF1404, IRF7401, IRF7403, IRF7404, IRF7406, IRF740A, IRF740AL, IRF740AS, IRF740FI.
Irf740 Mosfet Datasheet
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Irf740 Mosfet